Name of company / organization
V.E. Lashkaryov Institute of Semiconductor Physics National Academy of science Ukraine
Contacts:
41, Nauky av., Kyiv, 03028, Ukraine
Ph: 38(044) 525-40-20
Fax: +38 (044) 525-83-42
E-mail: dir@isp.kiev.ua, prokop@isp.kiev
http://www.isp.kiev.ua
Name of principle person or persons attending the exhibition / conference
Prokopenko Igor, Deputy director, professor, doctor physics and mathematics sciences, Heard of Department of Electron Probe Investigations of Semiconductors Materials
Scientific experience:
X-ray structure analysis. Structure ordering processes in semiconductor materials and low-dimensional systems under post-production treatments (temperature annealing, Γ-irradiation, microwave irradiation, ultrasound treatment etc.). Electron and atomic force microscopy for the structural investigation of semiconductor materials and system.
Main scientific publication list
1. Klimovskaya A.I., Ostrovskii I.P., Prokopenko I.V. Wire-like submicron crystal as a natural heterostructure // J. Phys.: Condens. Matter. 2001. Vol. 13. P. 5923-5930.
2. Datsenko L.I., Bak-Misiuk J., Klad'ko V.P., Prokopenko I.V. Calculation of two-dimensional maps of diffuse scattering by a real crystal with microdefects and comparison of results obtained from three-crystal diffractometry // J. of Physics D: Appl. Phys. 2001. Vol. 34. P.A87-A92.
3. Gnatyuk V.A., Mozol' P.O., Prokopenko I.V., Vlasenko A.I. Laser-induced changes in photoelectric properties of MnxHg1-xTe crystals // Infrared Physics & Technology. 2001. Vol. 42. P. 69-75.
4. Lytvyn P.M., Prokopenko I.V., Strelchuk V.V., Mazur Yu.I., Wang Zh.M., Salamo G.J. Microsize defects in InGaAs/GaAs (N11)A/B multilayers quantum dot stacks // Journal of Crystal Growth. - 2005. Vol. 284. P. 4756.
Type of business in which you are involved:
Institute of Semiconductor Physics (ISP) of the National Academy of Sciences of Ukraine (NASU)
The Institute of Semiconductor Physics (ISP) of the National Academy of Sciences of Ukraine (NASU) has been established in 1960 on the basis of several departments and laboratories of the Institute of Physics of NASU. The deciding factor in this was that two scientific schools have been developed at the above subdivisions of the Institute of Physics and gained worldwide recognition by that time, namely, those headed by the Academicians of NASU V.E. Lashkaryov and S.I. Pekar. A commercial Special Bureau for Design and Technology (SBDT) with Pilot Production Department (PPD) is attached to ISP. ISP is engaged in fundamental investigations and scientific-technical works in the following areas: physics of semiconductors and semiconductor devices; semiconductor materials science; optics and spectroscopy; optoelectronics; sensorics; diagnostics and certification of semiconductor materials; infrared photoelectronics; liquid-crystal and electrolumines-cence facilities for display of information; high-temperature electronics; semiconductor solar power engineering. Top priority will be given henceforth to fundamental and applied investigations and developments along the following lines:
- interaction between electromagnetic radiation and matter, semiconductor optics and photonics;
- semiconductor materials science;
- physics of low-dimensional structures;
- optoelectronics and microelectronics;
- technologies and materials for sensor and infrared engineering.
Since 1990 ISP was headed by Academician of NASU, Doctor Sci., Prof. S.V. Svechnikov, and since 2003 it is headed by Corresponding Member of NASU, Dr. Sci. (Physics-and-Mathematics) V.F.Machulin.
Specific offer to American companies:
Temperature, Magnetic Field and Multifunctional sensors for Cryogenic Applications
Applications: Static and dynamic temperature and magnetic field measurements in the 0.03 K to 400 K range and fields up to 30 T.
- Dual function sensors (DFSs) for measurements of temperature (1.5 K to 400 K and 0.1 K to 400 K) and magnetic field.
- The family of Ge-on-GaAs resistance thermometers covering the temperature range for operation from 0.03 K to 500 K.
- Si diode temperature sensors for temperature measurements in the 2 K to 400 K range.
Silicon Diode Temperature Sensors
New type temperature sensors (in comparison with the existing analogues) are advanced devices with minimised influence of self-heating and noise for temperature measurement, with enhanced sensitivity in low temperature range, accuracy and reproducibility. Sensors are recommended for highprecision temperature control and measurement.
Temperature range: 4.2 K-500 K,
accuracy (calibrated): ±23 mK, ±50 mK (373 K<T<500 K),
interchange tolerance: ±0.5 K
Multichannel Optical Rotary Joint
Multichannel optical rotary joint is intended for the non-contact transfer of the analog and digital signals from the rotating objects to the stationary and is the optical analog of the electrical slip rings.
Application
- wide angle azimuth field of view scanning systems in visible and IR
- radar antenna equipment
- different optical communication system for the sensor data signals coupling between members free to rotate with respect to each other
Specification
number of optical channels * up to 20
insertion optical loss ** 3-10 dB
crosstalk less then "-" 80dB
channel bandwidth at less 500 Mb/s
optical signal amplitude modulation with rotating process less then 15%
rotational speeds up to 200 rpm
temperature range -20C to +80C
FORJ insertion length 180mm
* the number of optical channels and type of interface are determined by the application area and customization demands.
** depends on the fiber optic cable diameter and numerical aperture, as well as specification of the radiation sources and detectors, which are applied in the fiber optic communication channels.
Electronic nose GAZ-2
Destination: device "GAZ-2" is a gas analytical chemosensory system designed for pattern recognition of volatile organic compounds.
Area of application: "GAZ-2" can be used for environment monitoring to detect hazard pollutants in air, in agriculture and food industry for testing quality and freshness of fruits, meat, fish and other products. Especially great attention can be paid from perfumes producers and producers of beverages (brandy, vodka, beer, coffee). Another possible area of application is criminalistics and customer service for detection of drags, explosive materials, etc.
Main technical characteristics:
Number of channel - 8
Working cell volume - 9 cm3
Frequency drift (under temperature stabilization) - 0.5 Hz / hour
Counter range - 016 MHz
Resolution - 1 Hz
Time single frequency counting - 1s
Time of measuring for recognition - less 5 min
Number of recognizing chem. images - more 10
Range of analyte concentration - 10 10000 ppm
Working temperature - 20 - 30 C
Software - DOS, Win9X
PC connecting - RS-232
Power supply - 12V/0.4A
Multienzyme sensor MES-3
Multienzyme sensor 'MES-3' is the device for registration of organic pesticides and heavy metal ions in foods and water solutions.
Assignment: express analysis of water and foods on content of heavy metal ions, phosphor-organic pesticides and cyanides in stationary conditions.
Application: Multienzyme sensor can be used in areas:
- Ecological monitoring of surrounded environment
- Detection of toxic substances in water and foodstuffs
- Molecule recognition in devices of type "electronic tongue"
- Biochemical immune - ferment investigation
Additional parameters:
The threshold sensitivity:
for metal ions of Cu, Ag, Hg - 5x10-8 mol/l (1 mkg/l)
for metal ions of Co, Cd, Wi - 10-7 mol/l (10 mkg/l)
for metal ions of Ni, Pb, Sn, Sr, Zn - 10-5 - 10-6 mol/l (1-0.1 mg/l)
for phosphororganic pesticides - 10-9 mol/l
The time of registration - don't exceed 15 min
The number of enzyme channels needed - not less than 4
The error of concentration measurements:
for separate toxicants - not more than 15 %
in mixtures of different toxicants - not than 30 %
Software - Windows 95/98/2000/ME
SPR Spectrometer PLASMON-6
Surface plasmon resonance (SPR) is a unique optical surface sensing technique that is responsive to refractive index changes that occur within the vicinity of a sensor surface. SPR can be used to monitor any physical phenomenon which alters the refractive index at the surface and has grown into a versatile technique used in variety of applications. Of special interest is its potential for biosensing techniques.
The most used applications:
- Realization of real time biokinetic, immunosensing and biosensing techniques
- Studies of adsorption, corrosion, electrochemical reactions
- Thin organic and inorganic film characterization and refractive index measurements
- Gas and liquid composition detection and chemosensor applications
System Specifications:
Refractive index measurement range - 1.0 1.5
Detection limit of refractive index variation - 0.00005
Angle-of-incidence setting precision - 10 angular sec
Maximum angular scan - 17°
Total measurement time of a single resonant curve - 3 sec
Maximum time resolution of kinetics measurements:
Maximum time resolution for Tracing measurement mode - 1 sec
Maximum time resolution for Slope measurement mode - 0.2 sec
Number of optical channels - 2
Light source - GaAs laser (Λ=650 nm)
Additional ADC input (optional) - ±5V
Overall dimensions of the measurement unit - 215x130x100 mm
Weight - 2.5 kg
Computer connect - COM port, USB
Control and data processing software - Windows-95/98/ME/XP
Display measuring system
Display measuring system for LCD characterization. The system have possibilkity to measure the static and dynamic parameters of different kinds of LCD (volt-brightness and volt-contrast characteristics, viewing angle, multiplex possibility, timing, etc.). The system added with spectrometer for spectral characteristics measuring in transmitting, reflecting and transflecting mode of operation. Special heatig-cooling unit allows to measure the temperature dependencies of LCDs. All parameters are measured accordinf international Standarts.
Personal gamma radiation dosimeter DKS-02K
1. Measurement range of gamma and X-rays equivalent dose rate and main relative error (137Cs): - 0.1 to 10000;±15% μSv/h.
2. Measurement range of gamma and X-rays equivalent dose and main relative error (137Cs): - 1 to 9999; ±10% μSv
3.Gamma and X-rays energy response: - 0,05 to 3,0; ±15% MeV.
Portable electron paramagnetic resonance (EPR) spectrometer
Development of a new mini-spectrometer for EPR is based on original constructive solutions by using modern radio-element base. Main author's contribution is a new resonator which usage in the given spectrometer let us use the magnet with a narrow gap between the poles that therefore lowered the weight and the dimensions of the spectrometer in comparison with commercial available. This device is easier in use (connectable to any PC or laptop), economical and simplicity of its construction, and, the main point is that it is 10 to 100 times cheaper (it depends on the model) than the other existing. Because of its functional characteristics, constructive material and components, fields of usage of a new mini-spectrometer have significantly expanded.
Two-dimensional photonic silicon structures
Two-dimensional photonic silicon structures made by a method of photoanodiñ etching is a perspective material for development of photo and thermo detective devices. It is connected to low-cost of technology of photoelectrochemical etching, formation of additional bands of optical absorption.
Characteristics of thermal detecting structures: temperature resistance coefficient 1 4%/Ê, noise level 2 5x10-9 VxHz1/2
Low-Cost Self-Assembling Technology for Nano-Electro-Mechanical Systems (NEMS) and ultra-fast light-emission sources.*
The Low-Cost Self-Assembling Nanotechnology is based on common used variant of metal-catalyzed mediated CVD method, and uses additionally surfactants, thermal modulation, mismatched substrate and special substrate preparation for realizing the cylinder-, cone-, or sphere-like nanoobjects and to suppress the native spread of their geometric parameters. The distinguished feature of the technological approach which we propose consists in getting access to mechanisms and usually unaccounted factors responsible for nanowire shaping, by means of combination of real technological experiments with computer simulations of growth processes of nanoobjects. Analysis of growth mechanisms and their simulations, as well as a characterization of electronic and optical properties of the grown arrays of silicon nanowires for development of nanodevices were carried out in cooperation with Hewlett-Packard Laboratories (Palo Alto, CA, USA) and Institut d'Electronique de Microelectronique et de Nanotechnologie (Villeneuve D'Ascq, France).
Solar arrays for mobile phone.
Solar arrays are intend for use as charger for mobile phone and other portable electronic devices.
Porous SiC for implanting
Porous SiC has a great application potential in many industrial applications such as light ultrastrong material in aerospace and motor-car industry, medicine and as well as heat insulation material. The possible use of porous silicon carbide as a biocompatible material suitable for orthopedic and dental implants was also proven.
The types of company you would like to meet:
Company, which deal with researh and development in the fields of semiconductor matherials, electronics and devices.
|